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PDF ( 数据手册 , 数据表 ) IRF6892STR1PBF

零件编号 IRF6892STR1PBF
描述 Power MOSFET ( Transistor )
制造商 International Rectifier
LOGO International Rectifier LOGO 


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IRF6892STR1PBF 数据手册, 描述, 功能
PD - 97770
IRF6892STRPbF
IRF6892STR1PbF
DirectFET®plus MOSFET with Schottky Diode ‚
l RoHS Compliant and Halogen Free 
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
l Ultra Low Package Inductance
25V max ±16V max 1.3mΩ @ 10V 2.0mΩ @ 4.5V
l Optimized for High Frequency Switching 
l Ideal for CPU Core DC-DC Converters
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
l Optimized for Control FET Application
17nC 6.0nC 2.3nC 39nC 16nC 1.8V
l Compatible with existing Surface Mount Techniques 
l 100% Rg tested
GS
DS
SD
Applicable DirectFET Outline and Substrate Outline 
S3C
ISOMETRIC
S1 S2 S3C
M2 M4
L4 L6 L8
Description
The IRF6892SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6892SPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters
that power high current loads such as the latest generation of microprocessors. The IRF6892SPbF has been optimized for parameters that
are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
25
±16
V
28
22
125
A
220
240 mJ
22 A
8.0 14.0
6.0
ID = 28A
12.0
10.0
ID= 22A
VDS= 20V
VDS= 13V
4.0 8.0 VDS= 5V
6.0
2.0 TJ = 125°C
4.0
0.0
2
TJ = 25°C
468
10 12 14 16
2.0
0.0
0
10 20 30 40 50
VGS, Gate -to -Source Voltage (V)
QG Total Gate Charge (nC)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 1.2mH, RG = 25Ω, IAS = 22A.
1
4/4/12
Free Datasheet http://www.Datasheet4U.com







IRF6892STR1PBF pdf, 数据表
IRF6892STR/TR1PbF
DirectFET®plus Outline Dimension, S3C Outline (Small Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
CODE
A
B
C
D
E
F
G
H
J
K
L
M
P
R
DIMENSIONS
METRIC
IMPERIAL
MIN MAX MIN MAX
4.75 4.85 0.187 0.191
3.70 3.95 0.146 0.156
2.75 2.85 0.108 0.112
0.35 0.45 0.014 0.018
0.48 0.52 0.019 0.020
0.48 0.52 0.019 0.020
1.18 1.22 0.047 0.048
0.68 0.72 0.027 0.028
0.38 0.42 0.015 0.016
0.90 1.00 0.035 0.039
1.80 1.90 0.071 0.075
0.52 0.62 0.020 0.024
0.08 0.17 0.003 0.007
0.02 0.08 0.0008 0.0031
DirectFET®plus Part Marking
8
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
www.irf.com
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