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PDF ( 数据手册 , 数据表 ) D4N06L

零件编号 D4N06L
描述 RFD4N06L
制造商 Intersil
LOGO Intersil LOGO 


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D4N06L 数据手册, 描述, 功能
Data Sheet
RFD4N06L, RFD4N06LSM
June 1999 File Number 2837.1
4A, 60V, 0.600 Ohm, Logic Level,
N-Channel Power MOSFETs
The RFD4N06L, RFD4N06LSM are N-Channel enhancement
mode silicon gate power field effect transistors specifically
designed for use with logic level (5 volt) driving sources in
applications such as programmable controllers, automotive
switching, and solenoid drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conduction at gate biases in the 3-5 volt
range, thereby facilitating true on-off power control from logic
circuit supply voltages.
Formerly developmental type TA09520.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD4N06L
TO-251AA
RFD4N06L
RFD4N06LSM
TO-252AA
RFD4N06LSM
NOTE: When ordering, use the entire part number.
Features
• 4A, 60V
• rDS(ON) = 0.600
• Design Optimized for 5 Volt Gate Drive
• Can be Driven Directly From Q-MOS, N-MOS,
or TTL Circuits
• SOA is Power Dissipation Limited
• 175oC Rated Junction Temperature
• Logic Level Gate
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN
(FLANGE)
GATE
SOURCE
6-189
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
Free Datasheet http://www.Datasheet4U.com












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