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PDF ( 数据手册 , 数据表 ) H30R1202

零件编号 H30R1202
描述 Reverse Conducting IGBT
制造商 Infineon
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H30R1202 数据手册, 描述, 功能
IHW30N120R2
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
Features:
Powerful monolithic Body Diode with very low forward voltage
Body diode clamps negative voltages
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
Inductive Cooking
Soft Switching Applications
C
G
E
PG-TO-247-3
Type
IHW30N120R2
VCE
1200V
IC
30A
VCE(sat),Tj=25°C
1.65V
Tj,max
175°C
Marking
H30R1202
Package
PG-TO-247-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 1200V, Tj 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp 2.5µs, sine halfwave
TC = 100°C, tp 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
Value
1200
60
30
90
90
60
30
90
50
130
120
±20
±25
390
-40...+175
-55...+175
260
Unit
V
A
V
W
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 1.5 Dec. 09
Free Datasheet http://www.0PDF.com







H30R1202 pdf, 数据表
IHW30N120R2
Soft Switching Series
10V
240V
960V
1nF
Ciss
5V
0V
0nC 50nC 100nC 150nC 200nC 250nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=30 A)
100pF
Coss
Crss
0V 10V 20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
D=0.5
10-1K/W
10-2K/W
0.2
0.1
0.05
0.02
0.01
R,(K/W)
0.0782
0.1642
0.1158
0.0259
R1
τ, (s)
1.24*10-1
1.49*10-2
1.04*10-3
1.26*10-4
R2
single pulse
C1=τ1/R1 C2=τ2/R2
10-3K/W
10µs 100µs 1ms
10ms 100ms
tP, PULSE WIDTH
Figure 19. IGBT transient thermal
resistance
(D = tp / T)
D=0.5
10-1K/W 0.2
0.1
0.05
0.02
0.01
R,(K/W)
0.1476
0.1128
0.0885
0.0233
R1
τ, (s)
8.51*10-2
8.37*10-3
7.14*10-4
5.96*10-5
R2
10-2K/W
single pulse
C1=τ1/R1 C2=τ2/R2
10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 20. Diode transient thermal
impedance as a function of pulse width
(D=tP/T)
Power Semiconductors
8
Rev. 1.5 Dec. 09
Free Datasheet http://www.0PDF.com














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