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PDF ( 数据手册 , 数据表 ) H30T100

零件编号 H30T100
描述 IGBT
制造商 Infineon Technologies
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H30T100 数据手册, 描述, 功能
Soft Switching Series
IHW30N100T
q
Low Loss DuoPack : IGBT in TrenchStop®and Fieldstop technology
with anti-parallel diode
Features:
1.1V Forward voltage of antiparallel rectifier diode
Specified for TJmax = 175°C
TrenchStop® and Fieldstop technology for 1000 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
Low EMI
Qualified according to JEDEC1 for target applications
Application specific optimisation of inverse diode
Pb-free lead plating; RoHS compliant
G
PG-TO-247-3
C
E
Applications:
Microwave Oven
Soft Switching Applications
Type
VCE
IHW30N100T 1000V
IC
30A
VCE(sat),Tj=25°C
1.55V
Tj,max Marking
175°C H30T100
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE 1000V, Tj 175°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation, TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
1000
60
30
90
90
22
12
36
±20
±25
412
-40...+175
-55...+175
260
Unit
V
A
V
W
°C
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.7 Nov 08
Free Datasheet http://www.nDatasheet.com







H30T100 pdf, 数据表
Soft Switching Series
IHW30N100T
q
200V
1nF
10V 800V
Ciss
5V
0V
0nC 50nC 100nC 150nC 200nC 250nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=30 A)
100pF
Coss
Crss
10pF
0V
10V 20V 30V 40V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
D=0.5
10-1K/W
0.2
0.1
0.05
10-2K/W
R,(K/W)
0.1586
0.0987
0.0807
0.026
R1
0.02
τ, (s)
7.03*10-2
6.76*10-3
6.53*10-4
8.22*10-5
R2
0.01
C1=τ1/R1 C2=τ2/R2
single pulse
1µs 10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 19. IGBT transient thermal resistance
(D = tp / T)
100K/W
D=0.5
0.2
0.1
10-1K/W
0.05
0.02
0.01
R,(K/W)
0.0715
0.2222
0.4265
0.364
0.0181
R1
τ, (s)
9.45*10-2
2.55*10-2
3.6*10-3
5.1*10-4
1.09*10-4
R2
single pulse
C1=τ1/R1 C2=τ2/R2
10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 20. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
Power Semiconductors
8
Rev. 2.7 Nov 08
Free Datasheet http://www.nDatasheet.com














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