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PDF ( 数据手册 , 数据表 ) K9F1G08U0C

零件编号 K9F1G08U0C
描述 FLASH MEMORY
制造商 Samsung
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K9F1G08U0C 数据手册, 描述, 功能
K9F1G08B0C
K9F1G08U0C
Advance
FLASH MEMORY
K9F1G08X0C
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
Samsung Confidential
1
Free Datasheet http://www.datasheetlist.com/







K9F1G08U0C pdf, 数据表
K9F1G08B0C
K9F1G08U0C
Advance
FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Temperature Under
Bias
Storage Temperature
Short Circuit Current
K9F1G08X0C-PCB0
K9F1G08X0C-PIB0
K9F1G08X0C-PCB0
K9F1G08X0C-PIB0
Symbol
VCC
VIN
VI/O
TBIAS
TSTG
IOS
Rating
-0.6 to + 4.6
-0.6 to + 4.6
-0.6 to Vcc + 0.3 (< 4.6V)
-10 to +125
-40 to +125
-65 to +150
5
Unit
V
°C
°C
mA
Note :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F1G08X0C-PCB0 :TA=0 to 70°C, K9F1G08X0C-PIB0:TA=-40 to 85°C)
Parameter
Symbol
K9F1G08B0C(2.7V)
Min Typ. Max
K9F1G08U0C(3.3V)
Min Typ. Max
Supply Voltage
VCC 2.5 2.7 2.9 2.7 3.3 3.6
Supply Voltage
VSS 0 0 0 0 0 0
Unit
V
V
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Operating
Current
Page Read with
Serial Access
Program
Erase
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
ICC1
ICC2
ICC3
ISB1
ISB2
ILI
ILO
tRC=25ns
CE=VIL, IOUT=0mA
-
-
CE=VIH, WP=0V/VCC
CE=VCC-0.2, WP=0V/VCC
VIN=0 to Vcc(max)
VOUT=0 to Vcc(max)
Input High Voltage
VIH(1)
-
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
VIL(1)
-
VOH
K9F1G08B0C :IOH=-100µA
K9F1G08U0C :IOH=-400µA
VOL
K9F1G08B0C :IOL=100µA
K9F1G08U0C :IOL=2.1mA
IOL(R/B)
K9F1G08B0C :VOL=0.1V
K9F1G08U0C :VOL=0.4V
K9F1G08B0C(2.7V)
Min Typ Max
- 15 30
- -1
- 10 50
- - ±10
- - ±10
Vcc
-0.4
-
VCC
+0.3
-0.3 -
0.5
Vcc
-0.4
-
-
- - 0.4
34 -
K9F1G08U0C(3.3V)
Min Typ Max
- 15 30
- -1
- 10 50
- - ±10
- - ±10
2.0
-
VCC
+0.3
-0.3 -
0.8
2.4 -
-
- - 0.4
8 10 -
Note : 1. VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.
2. Typical value is measured at Vcc=2.7V/3.3V, TA=25°C. Not 100% tested.
Unit
mA
µA
V
mA
Samsung Confidential
8
Free







K9F1G08U0C equivalent, schematic
K9F1G08B0C
K9F1G08U0C
Advance
FLASH MEMORY
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal 2,112byte
data registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for voice or
audio applications which use slow cycle time on the order of µ-seconds, de-activating CE during the data-loading and serial access
would provide significant savings in power consumption.
Figure 4. Program Operation with CE don’t-care.
CLE
CE
CE don’t-care
WE
ALE
I/Ox
80h Address(4Cycles)
Data Input
Data Input
10h
tCS tCH
tCEA
CE CE
tWP
WE
tREA
RE
I/O0~7
out
Figure 5. Read Operation with CE don’t-care.
CLE
CE
RE
ALE
R/B
WE
I/Ox
tR
00h
Address(4Cycle)
30h
16
CE don’t-care
Data Output(serial access)
Samsung Confidential
Free Datasheet http://www.datasheetlist.com/










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