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PDF ( 数据手册 , 数据表 ) FGA20N120FTD

零件编号 FGA20N120FTD
描述 20A Trench IGBT
制造商 Fairchild Semiconductor
LOGO Fairchild Semiconductor LOGO 


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FGA20N120FTD 数据手册, 描述, 功能
FGA20N120FTD
1200V, 20A Trench IGBT
Features
• Field stop trench technology
• High speed switching
• Low saturation voltage: VCE(sat) =1.6V @ IC = 20A
• High input impedance
• RoHS compliant
Applications
• Induction heating and Microvewave oven
• Soft switching applications
December 2007
tm
General Description
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching perfor-
mances, and easy parallel operation with exceptional avalanche
ruggedness. This device is designed for soft switching applica-
tions.
C
GCE
TO-3PN
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating, Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2007 Fairchild Semiconductor Corporation
FGA20N120FTD Rev. A
1
G
E
Ratings
1200
± 25
40
20
60
20
298
119
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
W
W
oC
oC
oC
Typ.
-
-
-
Max.
0.42
2.0
40
Units
oC/W
oC/W
oC/W
www.fairchildsemi.com
Free Datasheet http://www.datasheet-pdf.com/







FGA20N120FTD pdf, 数据表
Mechanical Dimensions
TO-3PN
FGA20N120FTD Rev. A
Dimensions in Millimeters
8 www.fairchildsemi.com
Free Datasheet http://www.datasheet-pdf.com/














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