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PDF ( 数据手册 , 数据表 ) 7D5N60F1

零件编号 7D5N60F1
描述 KHB7D5N60F1
制造商 KEC
LOGO KEC LOGO 


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7D5N60F1 数据手册, 描述, 功能
SEMICONDUCTOR
TECHNICAL DATA
KHB7D5N60P1/F1
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
VDSS=600V, ID=7.5A
Drain-Source ON Resistance :
RDS(ON)=1.2 @VGS=10V
Qg(typ.)= 32.5nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB7D5N60P1 KHB7D5N60F1
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
600
30
V
V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
ID
IDP
EAS
EAR
dv/dt
PD
7.5 7.5*
4.6 4.6*
30 30*
230
14.7
4.5
147 48
1.18 0.38
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Thermal Characteristics
Tstg -55 150
Thermal Resistance, Junction-to-Case RthJC
0.85
Thermal Resistance, Case-to-Sink
RthCS
0.5
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
2.6 /W
- /W
62.5 /W
D
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
KHB7D5N60P1
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
A
E
P
K
L
D
MM
N 123
KHB7D5N60F1
C
F
B
G
O
JQ
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_0.1
E 3.18 +_ 0.1
F 3.3 +_0.1
G 12.57 +_ 0.2
H 0.5 +_0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 2.54 +_ 0.2
N 4.7 +_ 0.2
O 6.68 +_ 0.2
P 6.5
Q 2.76 +_ 0.2
TO-220IS
2005. 12. 27
G
S
Revision No : 0
1/7
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