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零件编号 | 13007N | ||
描述 | ST13007N | ||
制造商 | STMicroelectronics | ||
LOGO | |||
1 Page
ST13007N
® ST13007NFP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
s HIGH VOLTAGE CAPABILITY
s NPN TRANSISTOR
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
APPLICATIONS
s ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s SWITCH MODE POWER SUPPLIES
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
They use a Cellular Emitter structure to enhance
switching speeds.
3
2
1
TO-220
TO-220FP
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCEV
V CEO
V EBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collect or-Emitter Voltage (VBE = -1.5V)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Tot al Dissipation at Tc ≤ 25 oC
Storage Temperature
Max. Operating Junction Temperature
March 1999
Value
ST13007N
S T13 0 07NF P
700
400
9
8
16
4
8
80 33
-65 to 150
150
Uni t
V
V
V
A
A
A
A
W
oC
oC
1/7
Free Datasheet http://www.datasheet4u.net/
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页数 | 7 页 | ||
下载 | [ 13007N.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
13007 | NPN Epitaxial Silicon Transistor | Elite |
13007A | MJE13007A | Mospec Semiconductor |
13007B | TS13007B | TSC |
13007N | ST13007N | STMicroelectronics |
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