|
|
零件编号 | 6N06T | ||
描述 | PHT6N06T | ||
制造商 | NXP Semiconductors | ||
LOGO | |||
1 Page
Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
PHT6N06T
GENERAL DESCRIPTION
N-channel enhancement mode
logic level field-effect power
transistor in a plastic envelope
suitable for surface mounting.
Using ’trench’ technology the
device features very low
on-state resistance and has
integral zener diodes giving
ESD protection. It is intended for
use in DC-DC converters and
general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC) Tsp = 25 ˚C
Drain current (DC) Tamb = 25 ˚C
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 10 V
MAX.
55
5.5
2.5
8.3
150
150
PINNING - SOT223
PIN DESCRIPTION
1 gate
2 drain
3 source
4 drain (tab)
PIN CONFIGURATION
4
123
SYMBOL
d
g
s
UNIT
V
A
A
W
˚C
mΩ
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
-
RGS = 20 kΩ
-
Tsp = 25 ˚C
Tamb = 25 ˚C
Tsp = 100 ˚C
Tamb = 100 ˚C
Tsp = 25 ˚C
Tamb = 25 ˚C
Tsp = 25 ˚C
Tamb = 25 ˚C
-
ESD LIMITING VALUE
SYMBOL
VC
PARAMETER
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model
(100 pF, 1.5 kΩ)
MIN.
-
-
-
-
-
-
-
-
-
-
-
- 55
MAX.
55
55
20
5.5
2.5
3.8
1.75
22
10
8.3
1.8
150
UNIT
V
V
V
A
A
A
A
A
A
W
W
˚C
MIN.
-
MAX.
2
UNIT
kV
September 1997
1
Rev 1.000
Free Datasheet http://www.datasheet4u.net/
Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
36
60
4.6
9
10
18
4.5
Product specification
PHT6N06T
Dimensions in mm.
7
15
50
Fig.19. PCB for thermal resistance and power rating for SOT223.
PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick).
September 1997
8
Rev 1.000
Free Datasheet http://www.datasheet4u.net/
|
|||
页数 | 10 页 | ||
下载 | [ 6N06T.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
6N06T | PHT6N06T | NXP Semiconductors |
零件编号 | 描述 | 制造商 |
STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
DataSheet8.cn | 2020 | 联系我们 | 搜索 | Simemap |