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PDF ( 数据手册 , 数据表 ) J649

零件编号 J649
描述 P-Channel MOSFET ( Transistor ) - 2SJ649
制造商 NEC
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J649 数据手册, 描述, 功能
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ649
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ649 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ649
Isolated TO-220
FEATURES
Low on-state resistance:
RDS(on)1 = 48 mMAX. (VGS = –10 V, ID = –10 A)
RDS(on)2 = 75 mMAX. (VGS = –4.0 V, ID = –10 A)
Low input capacitance:
Ciss = 1900 pF TYP. (VDS = –10 V, VGS = 0 V)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
VDSS
VGSS
ID(DC)
ID(pulse)
PT
–60
m 20
m 20
m 70
25
V
V
A
A
W
Total Power Dissipation (TA = 25°C)
PT 2.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg –55 to +150 °C
IAS –20 A
EAS 40 mJ
(Isolated TO-220)
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = –30 V, RG = 25 , VGS = –20 ¡ 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16332EJ1V0DS00 (1st edition)
Date Published May 2003 NS CP(K)
Printed in Japan
2002
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J649 pdf, 数据表
2SJ649
The information in this document is current as of May, 2003. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1
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