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PDF ( 数据手册 , 数据表 ) FB190SA10

零件编号 FB190SA10
描述 Power MOSFET ( Transistor )
制造商 Vishay
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FB190SA10 数据手册, 描述, 功能
www.vishay.com
VS-FB190SA10
Vishay Semiconductors
Power MOSFET, 190 A
SOT-227
PRODUCT SUMMARY
VDSS
ID DC
RDS(on)
Type
Package
100 V
190 A
0.0065
Modules - MOSFET
SOT-227
FEATURES
• Fully isolated package
• Very low on-resistance
• Fully avalanche rated
• Dynamic dV/dt rating
• Low drain to case capacitance
• Low internal inductance
• Optimized for SMPS applications
• Easy to use and parallel
• Industry standard outline
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
High current density power MOSFETs are paralleled into a
compact, high power module providing the best
combination of switching, ruggedized design, very low
on-resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all
commercial-industrial applications at power dissipation
levels to approximately higher than 500 W. The low thermal
resistance and easy connection to the SOT-227 package
contribute to its universal acceptance throughout the
industry.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous drain current at VGS 10 V
Pulsed drain current
Power dissipation
Linear derating factor
TC = 40 °C
ID
TC = 100 °C
IDM
PD TC = 25 °C
Gate to source voltage
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Peak diode recovery dV/dt
VGS
EAS (2)
IAR (1)
EAR (1)
dV/dt (3)
Operating junction and storage temperature range
Insulation withstand voltage (AC-RMS)
Mounting torque
TJ, TStg
VISO
M4 screw
Notes
(1) Repetitive rating; pulse width limited by maximum junction temperature.
(2) Starting TJ = 25 °C, L = 43 μH, Rg = 25 , IAS = 180 A.
(3) ISD 180 A, dI/dt 83 A/μs, VDD V(BR)DSS, TJ 150 °C.
MAX.
190
130
720
568
2.7
± 20
700
180
48
5.7
- 55 to + 150
2.5
1.3
UNITS
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
kV
Nm
Revision: 13-Aug-13
1 Document Number: 93459
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.net/







FB190SA10 pdf, 数据表
www.vishay.com
SOT-227 Generation II
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
38.30 (1.508)
37.80 (1.488)
-A- 4 x M4 nuts
12.50 (0.492)
13.00 (0.512)
6.25 (0.246)
6.50 (0.256)
25.70 (1.012)
24.70 (0.972)
-B-
7.45 (0.293)
7.60 (0.299)
30.50 (1.200)
29.80 (1.173)
31.50 (1.240)
32.10 (1.264)
14.90 (0.587)
15.20 (0.598)
R full 2.10 (0.083)
2.20 (0.087)
2.20 (0.087)
1.90 (0.075)
4x
8.30 (0.327)
7.70 (0.303)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
-C-
0.13 (0.005)
Note
• Controlling dimension: millimeter
12.30 (0.484)
11.70 (0.460)
25.00 (0.984)
25.50 (1.004)
Revision: 02-Aug-12
1 Document Number: 95423
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.net/














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