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零件编号 | 4957AGM | ||
描述 | AP4957AGM | ||
制造商 | Advanced Power Electronics | ||
LOGO | |||
1 Page
Advanced Power
Electronics Corp.
AP4957AGM
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-Resistance
▼ Simple Drive Requirement
▼ Dual P MOSFET Package
D2
D2
D1
D1
Description
SO-8
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G2
S2
G1
S1
G1
BVDSS
RDS(ON)
ID
D1
G2
S1
-30V
26mΩ
-7.4A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Rating
-30
±20
-7.4
-5.9
-30
2
-55 to 150
-55 to 150
Value
62.5
Units
V
V
A
A
A
W
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
1
200712191
Free Datasheet http://www.datasheet4u.net/
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页数 | 5 页 | ||
下载 | [ 4957AGM.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
4957AGM | AP4957AGM | Advanced Power Electronics |
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