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零件编号 | 050N60PA | ||
描述 | KMB050N60PA | ||
制造商 | KEC | ||
LOGO | |||
1 Page
SEMICONDUCTOR
TECHNICAL DATA
General Description
It s mainly suitable for low viltage applications such as automotive,
DC/DC converters and a load switch in battery powered applications
FEATURES
VDSS= 60V, ID= 50A
Drain-Source ON Resistance :
RDS(ON)=18m (Max.) @VGS = 10V
MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC
Pulsed (Note 1)
Drain-Source Diode Forward Current
Drain Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
VDSS
VGSS
ID*
IDP
IS
PD* 25
Tj
Tstg
60
25
50
200
50
120
-55 175
-55 175
V
V
A
A
A
W
Note1) Pulse Test : Pulse width 10 S Duty cycle 1%
Thermal Characteristics
CHARACTERISTIC
SYMBOL
RATING
UNIT
Thermal Resistance, Junction-to-Ambient RthJA 62.5 /W
Thermal Resistance, Junction-to-Case
RthJC
1.24
/W
Equivalent Circuit
D
KMB050N60PA
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
G
S
2007. 8. 9
Revision No : 1
1/6
Free Datasheet http://www.datasheet4u.com/
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页数 | 6 页 | ||
下载 | [ 050N60PA.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
050N60PA | KMB050N60PA | KEC |
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