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PDF ( 数据手册 , 数据表 ) DB105S

零件编号 DB105S
描述 (DB101S - DB107S) 1.0 Ampere Surface Mount Glass Passivated Bridge Rectifier
制造商 Thinki Semiconductor
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DB105S 数据手册, 描述, 功能
DB101S thru DB107S
®
Pb Free Plating Product
DB101S thru DB107S
Pb
1.0 Ampere Surface Mount Glass Passivated Bridge Rectifier
Features
Glass passivated chip junction
Low forward voltage drop
High surge overload rating of 50 A peak
Ideal for printed circuit board
DB-S/DF-S
Unit : inch (mm)
.335(8.51)
.316(8.05)
.009(0.25)
Mechanical Data
Case: Molded plastic, DB-S/DF-S
Epoxy: UL 94V-0 rate flame retardant
Terminals: Leads solderable per MIL-STD-202,
method 208 guaranteed
Mounting position: Any
.045(1.14)
.035(0.89)
.205(5.2)
.195(5.0)
Absolute Maximum Ratings and Characteristics
Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or
inductive load. For capacitive load, derate current by 20%.
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at TA = 40 OC
Peak Forward Surge Current 8.3 ms Single Half-sine-wave
Superimposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 1 A
Maximum Reverse Current at Rated
DC Blocking Voltage
Typical Junction Capacitance 1)
at TA = 25 OC
at TA = 125 OC
Typical Thermal Resistance 2)
Typical Thermal Resistance 2)
Operating and Storage Temperature Range
Symbols
DB101S DB102S DB103S DB104S DB105S DB106S DB107S
DF005S DF01S DF02S DF04S DF06S DF08S DF10S
Unit
VRRM 50 100 200 400 600 800 1000 V
VRMS 35 70 140 280 420 560 700 V
VDC 50 100 200 400 600 800 1000 V
I(AV)
1A
IFSM
50 A
VF
IR
CJ
RθJA
RθJL
TJ ,TS
1.1
5
500
25
40
15
-55 to +150
V
µA
pF
OC/W
OC/W
OC
1) Measured at 1 MHz and applied reverse voltage of 4 V
2) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B with 0.5 X 0.5" (13 X 13
mm) copper pads.
© 2006 Thinki Semiconductor Co.,Ltd.
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http://www.thinkisemi.com/
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