|
|
零件编号 | IRFW620B | ||
描述 | N-Channel MOSFET | ||
制造商 | Fairchild Semiconductor | ||
LOGO | |||
1 Page
November 2001
IRFW620B / IRFI620B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.
Features
• 5.0A, 200V, RDS(on) = 0.8Ω @VGS = 10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
D
!
GS
D2-PAK
IRFW Series
GDS
I2-PAK
IRFI Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, Tstg
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
G!
●
◀▲
●
●
!
S
IRFW620B / IRFI620B
200
5.0
3.2
18
± 30
65
5.0
4.7
5.5
3.13
47
0.38
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient *
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ Max Units
-- 2.65 °C/W
-- 40 °C/W
-- 62.5 °C/W
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
Free Datasheet http://www.datasheet4u.com/
Package Dimensions (Continued)
9.90 ±0.20
I2-PAK
4.50 ±0.20
1.30
+0.10
–0.05
1.27 ±0.10
2.54 TYP
1.47 ±0.10
0.80 ±0.10
2.54 TYP
0.50
+0.10
–0.05
2.40 ±0.20
10.00 ±0.20
©2001 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. B, November 2001
Free Datasheet http://www.datasheet4u.com/
|
|||
页数 | 9 页 | ||
下载 | [ IRFW620B.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
IRFW620A | Power MOSFET ( Transistor ) | Fairchild Semiconductor |
IRFW620B | N-Channel MOSFET | Fairchild Semiconductor |
零件编号 | 描述 | 制造商 |
STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
DataSheet8.cn | 2020 | 联系我们 | 搜索 | Simemap |