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PDF ( 数据手册 , 数据表 ) FGA25N120FTD

零件编号 FGA25N120FTD
描述 Field Stop Trench IGBT
制造商 Fairchild Semiconductor
LOGO Fairchild Semiconductor LOGO 


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FGA25N120FTD 数据手册, 描述, 功能
March 2013
FGA25N120FTD
1200 V, 25 A Field Stop Trench IGBT
Features
• Field Stop Trench Technology
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 25 A
• High Input Impedance
• RoHS Complaint
Applications
• Induction Heating, Microvewave Oven
General Description
Using advanced field stop trench technology, Fairchild®’s
1200V trench IGBTs offer superior conduction and switching
performances for soft switching applications. The device can
operate in parallel configuration with exceptional avalanche rug-
gedness. This device is designed for induction heating and
microwave oven.
C
GCE
TO-3P
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
Diode continuous Forward current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitiverating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2008 Fairchild Semiconductor Corporation
FGA25N120FTD Rev. C0
1
G
E
Ratings
1200
± 25
50
25
75
25
313
125
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
W
W
oC
oC
oC
Typ.
-
-
-
Max.
0.4
1.42
40
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com







FGA25N120FTD pdf, 数据表
Mechanical Dimensions
TO-3PN
©2008 Fairchild Semiconductor Corporation
FGA25N120FTD Rev. C0
8
Dimensions in Millimeters
www.fairchildsemi.com














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