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PDF ( 数据手册 , 数据表 ) 2SC3052

零件编号 2SC3052
描述 NPN Silicon Plastic-Encapsulate Transistor
制造商 SeCoS
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2SC3052 数据手册, 描述, 功能
Elektronische Bauelemente
2SC3052
NPN Silicon
Plastic-Encapsulate Transistor
A suffix of "-C" specifies halogen & lead-free
3.COLLECTOR
FEATURES
1.BASE
2.EMITTER
n Excellent linearity of DC forward current gain
n RoHS Compliant Product
n Low collector to emitter saturation voltage
VCE(sat) = 0.3V max (@IC=100mA, IB=10mA)
D
A
L
3
Top View
12
BS
VG
C
H
K
J
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
MAXIMUM RATINGS* TA=25oC unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
PC
TJ, Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
50
50
6
0.2
150
125,-55~125
V
V
V
A
mW
oC
ELECTRICAL CH ARACTERIST ICS (Tam b = 25 oC unless otherwise sp ecified )
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
CLASSIFICATION OF hFE
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
NF
Test conditions
Ic=100 µ A, IE=0
Ic= 100µA, IB=0
IE= 100µ A, IC=0
VCB= 50 V , IE=0
VEB= 6V , IC=0
VCE= 6V, IC= 1mA
VCE= 6V, IC= 0.1mA
IC = 100mA, IB= 10mA
IC = 100mA, IB= 10mA
VCE=6V , IC= 10mA
VCE=6V, IE= 0, f = 1 MHz
VCE=6V, IE= -0.1mA, f = 1KHz
RG=2K
MIN
50
50
6
150
50
180
TYP MAX UNIT
V
V
V
0.1 µA
0.1 µA
800
0.3 V
1V
MHz
4 pF
15 dB
Marking
Rank
Range
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
LE
E
150-300
LF
F
250-500
LG
G
400-800
Any changing of specification will not be informed individual
Free Datasheet http://wPwawg.deat1asohefe3t4u.com/












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