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PDF ( 数据手册 , 数据表 ) KU047N08P

零件编号 KU047N08P
描述 N-ch Trench MOS FET
制造商 KEC
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KU047N08P 数据手册, 描述, 功能
SEMICONDUCTOR
TECHNICAL DATA
KU047N08P
N-ch Trench MOS FET
General Description
This Trench MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converter,
Synchronous Rectification and a load switch in battery powered
applications
FEATURES
VDSS= 75V, ID= 130A
Drain-Source ON Resistance :
RDS(ON)=4.7m (Max.) @VGS = 10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
VDSS
75
Gate-Source Voltage
VGSS
20
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
130
83
400*
700
9
4.5
Drain Power
Dissipation
Tc=25
Derate above 25
PD
167
1.33
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 ~ 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
0.75
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
PIN CONNECTION
D
G
2011. 1. 14
S
Revision No : 0
1/7
Free Datasheet http://www.datasheet4u.com/












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