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PDF ( 数据手册 , 数据表 ) SQ2308ES

零件编号 SQ2308ES
描述 Automotive N-Channel MOSFET
制造商 VISHAY
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SQ2308ES 数据手册, 描述, 功能
SQ2308ES
Vishay Siliconix
Automotive
N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
TO-236
(SOT-23)
60
0.155
0.205
2.3
Single
D
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
• AEC-Q101 Qualifiedc
• Find out more about Vishay’s Automotive
Grade Product Requirements at:
www.vishay.com/applications
G1
S2
3D
G
Top View
SQ2308ES (8J)*
* Marking Code
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
S
N-Channel MOSFET
SOT-23
SQ2308ES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)
IS
Pulsed Drain Currenta
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationa
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
60
± 20
2.3
1.4
2.5
9
11
6
2
0.6
- 55 to + 175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mountb
SYMBOL
RthJA
RthJF
LIMIT
175
75
UNIT
°C/W
Document Number: 65353
S10-2109-Rev. B, 27-Sep-10
www.vishay.com
1
This datasheet has been downloaded from http://www.digchip.com at thisFrpeeaDgaetasheet http://www.datasheet4u.com/












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