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PDF ( 数据手册 , 数据表 ) FGAF40N60SMD

零件编号 FGAF40N60SMD
描述 Field Stop IGBT
制造商 Fairchild Semiconductor
LOGO Fairchild Semiconductor LOGO 


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FGAF40N60SMD 数据手册, 描述, 功能
May 2013
FGAF40N60SMD
600 V, 40 A Field Stop IGBT
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A
• High Input Impedance
• Fast Swiching: EOFF = 6.5 uJ/A
• Tightened Parameter Distribution
• RoHS Compliant
Applications
• Sewing Machine, CNC
• Home Appliances, Motor-Control
General Description
Using novel field stop IGBT technology, Fairchild®’s new series
of field stop 2nd generation IGBTs offer the optimum perfor-
mance for solar inverter, UPS, welder and PFC applications
where low conduction and switching losses are essential.
C
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
*Drain current limited by maximum junction temperature
1: Repetitive rating: Pulse width limited by max. junction temperature
G
E
Ratings
600
± 20
80*
40*
120*
40*
20*
120*
115
58
-55 to +175
-55 to +175
300
Unit
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
©2012 Fairchild Semiconductor Corporation
FGAF40N60SMD Rev. C4
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/







FGAF40N60SMD pdf, 数据表
Typical Performance Characteristics
Figure 25. Reverse Recovery Time
200
TC = 25oC
TC = 175oC
150
100
di/dt = 100A/µs
di/dt = 200A/µs
50
0
0 5 10 15 20 25 30 35 40 45
Forward Current, IF [A]
Figure 26.Transient Thermal Impedance of IGBT
2
1
0.1
0.01
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
1E-3
1E-5
1E-4
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
10 100
Figure 27.Transient Thermal Impedance of Diode
4
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
single pulse
0.01
1E-5
1E-4
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
10 100
©2012 Fairchild Semiconductor Corporation
FGAF40N60SMD Rev. C4
8
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/














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