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PDF ( 数据手册 , 数据表 ) FGA30N65SMD

零件编号 FGA30N65SMD
描述 Field Stop IGBT
制造商 Fairchild Semiconductor
LOGO Fairchild Semiconductor LOGO 


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FGA30N65SMD 数据手册, 描述, 功能
July 2013
FGA30N65SMD
650 V, 30 A Field Stop IGBT
Features
• Maximum Junction Temperature : TJ =175oC
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.98 V(Typ.) @ IC = 30 A
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC, Induction Heating
• Telecom, ESS
General Description
Using novel field stop IGBT technology, Fairchild®’s new series
of field stop 2nd generation IGBTs offer the optimum perfor-
mance for solar inverter, UPS, welder, induction heating, tele-
com, ESS and PFC applications where low conduction and
switching losses are essential.
G CE
TO-3PN
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
©2013 Fairchild Semiconductor Corporation
FGA30N65SMD Rev. C2
1
C
G
E
Ratings
650
20
30
60
30
90
40
20
120
300
150
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/







FGA30N65SMD pdf, 数据表
Typical Performance Characteristics
Figure 25. Stored Charge
800
TC = 25oC
TC = 175oC
600
Figure 26. Reverse Recovery Time
300
TC = 25oC
250 TC = 175oC
200
400
di/dt = 200A/s
di/dt = 100A/s
200
150
di/dt =200A/s
di/dt =100A/s
100
50
0
5 10 15 20 25 30 35 40
Forwad Current, IF [A]
0
5 10 15 20 25 30 35 40
Forward Current, IF [A]
Figure 27.Transient Thermal Impedance of IGBT
1
0.5
0.1 0.2
0.1
0.05
0.02
0.01
0.01
single pulse
0.003
1E-5
1E-4
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
0.01
Rectangular Pulse Duration [sec]
0.1
1
Figure 28.Transient Thermal Impedance of Diode
2
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
single pulse
0.01
1E-5
1E-4
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
0.01
Rectangular Pulse Duration [sec]
0.1
1
©2013 Fairchild Semiconductor Corporation
FGA30N65SMD Rev. C2
8
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/














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