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PDF ( 数据手册 , 数据表 ) TA0104A

零件编号 TA0104A
描述 Digital Audio Amplifier Driver using Digital Power Processing
制造商 Tripath
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TA0104A 数据手册, 描述, 功能
Tripath Technology, Inc. - Technical Information
TA 0 1 0 4 A
STEREO 500W (4) CLASS-T DIGITAL AUDIO AMPLIFIER
DRIVER USING DIGITAL POWER PROCESSING (DPPTM)
TECHNOLOGY
Technical Information
Revision 3.1 – June 2000
GENERAL DESCRIPTION
The TA0104A is a 500W continuous average (4), two channel Amplifier Driver
Module which uses Tripath’s proprietary Digital Power Processing (DPPTM)
technology. Class-T amplifiers offer both the audio fidelity of Class-AB and the
power efficiency of Class-D amplifiers.
APPLICATIONS
Audio/Video
Amplifiers/Receivers
Pro-audio Amplifiers
Automobile Power Amplifiers
Subwoofer Amplifiers
BENEFITS
Reduced system cost with smaller/less
expensive power supply and heat sink
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Signal fidelity equal to high quality Class-AB
amplifiers
High dynamic range compatible with digital
media such as CD and DVD
Features
Class-T architecture
Proprietary Digital Power Processing
technology
Supports wide range of output power levels
“Audiophile” Sound Quality
0.02% THD+N @ 300W, 8
0.02% IHF-IM @ 100W, 8
350W @ 8, 0.1% THD+N, Vs = +90V
500W @ 4, 0.1% THD+N, Vs = +90V
High Power
450W @ 8, 1% THD+N, Vs = +90V
750W @ 4, 1% THD+N, Vs = +90V
High Efficiency
90% @ 400W @ 8, Vs = +75V
85% @ 600W @ 4, Vs = +75V
Dynamic Range = 106 dB
Requires only N-Channel MOSFET output transistors
High power supply rejection ratio
Mute input
Outputs short-circuit protected
Over- and under-voltage protection
Bridgeable, single-ended outputs
38-pin quad package
Supports 100kHz BW of Super Audio CD and DVD-
Audio (Refer to Application Note for specifics)
TYPICAL PERFORMANCE AT +90V
THD+N vs Output Power
10
5 20Hz - 22kHz BW
f = 1kHz
2 BBM = 25nS
1 VS = +/-90V
0.5 Av = 200
ST STW38NB20 MOSFET
0.2
0.1
0.05
0.02
RL = 4
0.01
0.005
0.002
0.001
RL = 8
12
5 10 20
50
Output Power (W)
100
200
500 1K
1 TA104A – Rev. 3.1/06.00







TA0104A pdf, 数据表
Tripath Technology, Inc. - Technical Information
TA0104A Amplifier Operation
Figure 1 is a simplified diagram of one channel (Channel 1) of a TA0104A amplifier to assist in
understanding its operation.
The audio input signal (IN1) is fed to the processor internal to the TA0104A, where a modulation
pattern is generated. This pattern is spread spectrum and varies between approximately 200kHz and
1.5MHz. Complementary copies of the switching pattern are level-shifted by the MOSFET drivers and
output from the TA0104A where they drive the gates (HO1 and LO1) of external power MOSFETs that
are connected as a half bridge. The output of the half bridge is a power-amplified version of the
switching pattern that switches between VSPOS and VSNEG. This signal is then low-pass filtered to
obtain amplified audio.
The processor portion of the TA0104A is operated from a 5-volt supply (between V5 and AGND). In
the generation of the complementary modulation pattern for the output MOSFETs, the processor
inserts a “break-before-make” dead time between when it turns one transistor off and it turns the
other one on in order to minimize shoot-through currents in the MOSFETs. The dead time can be
programmed by setting the break-before-make control bits, BBM0 and BBM1. Feedback information
from the output of the half-bridge is supplied to the processor via FDBKN1. Additional feedback
information to account for ground bounce is supplied via GNDKELVIN1.
The MOSFET drivers in the TA0104A are operated from voltages obtained from VN12 and LO1COM
for the low-side driver, and VBOOT (generated internal to the TA0104A) and HO1COM for the high-
side. Only N-Channel MOSFETs are required for both the top and bottom of the half bridge. VN12
must be a stable 12V above VSNEG. The gate resistors, RG, are used to control MOSFET slew rate
and thereby minimize voltage overshoots.
Over- and Under-Voltage Protection
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The TA0104A senses the power rails through VSPOS and VSNEG for over- and under-voltage conditions.
The over- and under-voltage limits are Vo and Vu respectively as specified in the Electrical
Characteristics table. If the supply voltage exceeds Vo or drops below Vu, the TA0104A shuts off the
output stages of the amplifiers and asserts a logic level high on HMUTE. The removal of the over-
voltage or under-voltage condition returns the TA0104A to normal operation and returns HMUTE to a
logic level low. Please note that the limits specified in the Electrical Characteristics table are at 25°C
and these limits may change over temperature.
Over-current Protection
The TA0104A has over-current protection circuitry to protect itself and the output transistors from
short-circuit conditions. The TA0104A uses the voltage across a resistor, RS (measured via
OCS1H+, OCS1H-, OCS1L+ and OCS1L-), that is in series with each output MOSFET to detect an
over-current condition. RS and ROCR are used to set the over-current threshold. The OCS pins must
be Kelvin connected for proper operation. See “Circuit Board Layout” in Application Information for
details. An over-current condition will cause the TA0104A to shut off the output stages of the
amplifiers and supply a logic level high on HMUTE. The occurrence of an over-current condition is
latched in the TA0104A and can be cleared by toggling the MUTE input or cycling power.
8 TA104A – Rev. 3.1/06.00







TA0104A equivalent, schematic
Tripath Technology, Inc. - Technical Information
Efficiency Of A TA0104A Amplifier
The efficiency, η, of an amplifier is:
η = POUT/PIN
The power dissipation of a TA0104A amplifier is primarily determined by the on resistance, RON, of
the output transistors used, and the switching losses of these transistors, PSW. For a TA0104A
amplifier, PIN (per channel) is approximated by:
PIN = PDRIVER + PSW + POUT ((RS + RON + RCOIL + RL)/RL)2
where:
PDRIVER = Power dissipated in the TA0104A = 1.6W/channel
PSW = 2 x (0.015) x Qg (Qg is the gate charge of M, in nano-coulombs)
RCOIL = Resistance of the output filter inductor (typically around 50m)
For an 400W RMS per channel, 8load amplifier using STW38NB20 MOSFETs, and an RS of
50m,
PIN = PDRIVER + PSW + POUT ((RS + RON + RCOIL + RL)/RL)2
= 1.6 + 2 x (0.015) x (95) + 400 x ((0.025 + 0.11 + 0.05 + 8)/8)2
= 1.6 + 2.85 + 419
= 423W
In the above calculation the RDS (ON) of 0.065was multiplied by a factor of 1.7 to obtain RON in order
to account for some temperature rise of the MOSFETs. (RDS (ON) typically increases by a factor of 1.7
as for a typical MOSFET as temperature increases from 25ºC to 170ºC.)
So,
η = POUT/PIN = 400/423 = 94%
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This compares to the 90% measured efficiency (see Typical Performance graphs).
Technical Documentation
Please refer to the Tripath “Application Notes” section on our web page
(http://www.tripath.com/html/tech.htm#appnotes) for more information regarding evaluation, test and
design of Class-T amplifiers.
16 TA104A – Rev. 3.1/06.00










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