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PDF ( 数据手册 , 数据表 ) RD07MUS2B

零件编号 RD07MUS2B
描述 RF POWER MOS FET Silicon MOSFET Power Transistor
制造商 Mitsubishi Electric Semiconductor
LOGO Mitsubishi Electric Semiconductor LOGO 


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RD07MUS2B 数据手册, 描述, 功能
< Silicon RF Power MOS FET (Discrete) >
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W
DESCRIPTION
RD07MUS2B is a MOS FET type transistor
specifically designed for VHF/UHF/870MHz
RF power amplifiers applications.
FEATURES
High power gain and High Efficiency.
Typical Po Gp ηD
(175MHz) 7.2W 13.8dB 65%
(527MHz) 8W 13.0dB 63%
(870MHz) 7W 11.5dB 58%
Integrated gate protection diode.
APPLICATION
For output stage of high power amplifiers in
VHF/UHF/800MHz-band mobile radio sets.
OUTLINE DRAWING
6.0+/-0.15
INDEX MARK
(Gate)
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
2
(0.25)
3
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
(0.25)
RoHS COMPLIANT
RD07MUS2B is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.www.DataSheet.net/
However, it is applicable to the following exceptions of RoHS Directions.
1. Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
RATINGS
VDSS Drain to source voltage
Vgs=0V
25
VGSS Gate to source voltage
Vds=0V
-5/+10
Pch Channel dissipation
Tc=25°C
50
Pin Input Power
Zg=Zl=50
0.8*
ID Drain Current
-3
Tch Junction Temperature
- 150
Tstg Storage temperature
- -40 to +125
Rth j-c Thermal resistance
Junction to case
2.5
Note: Above parameters are guaranteed independently.
*: 175MHz spec. is 0.6W
UNIT
V
V
W
W
A
°C
°C
°C/W
Publication Date : Oct.2011
1
Datasheet pdf - http://www.DataSheet4U.co.kr/







RD07MUS2B pdf, 数据表
< Silicon RF Power MOS FET (Discrete) >
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W
TYPICAL CHARACTERISTICS ( 380-430MHz )
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
50Pin-Po CHARACTERISTICS @f=380-430MH10z0
Ta=+25°C
40 f=380MHz
Vdd=7.2V
Idq=250mA
30
Po 80
60
20
10
0
0
η
Gp
40
20
Idd
0
5 10 15 20 25 30
Pin(dBm)
www.DataSheet.net/
Po-ACP characteristic
0
Ta=+25°C
-10 f=380MHz
Vdd=7.2V
-20 Idq=250mA
ηd
Gain
-30
ACP_1L
-40
ACP_1H
-50
80
60
40
20
0
-20
-60
20
25 30 35
Po (dBm )
-40
40
The detail of this application is shown in application note(AN-UHF-105.)
Publication Date : Oct.2011
8
Datasheet pdf - http://www.DataSheet4U.co.kr/







RD07MUS2B equivalent, schematic
< Silicon RF Power MOS FET (Discrete) >
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W
APPLICATION-NOTE
Typical Characteristics Table (Application For Example)
(These are only typical value and devices are not necessarily guaranteed at these values.)
RD07MUS2B
Single-stage amplifier for analog radio solution
Application Note Frequency Band
Vds
Pin
AN-VHF-047
135 to 175MHz
7.2V
0.3W
AN-VHF-046
170 to 205MHz
7.2V
0.3W
AN-UHF-096
450 to 527MHz
7.2V
0.4W
AN-UHF-098
400 to 470MHz
7.2V
0.4W
AN-900-039
763 to 870MHz
7.2V
0.5W
Single-stage amplifier for digital radio solution
Application Note Frequency Band
Vds
Pin
AN-UHF-105
380 to 430MHz
7.2V
0.03W
AN-UHF-106
350 to 400MHz
7.2V
0.03W
AN-900-041
800 to 870MHz
3.6V
0.04W
www.DataSheet.net/
Po
7W
7W
7W
7W
6.5W
Po
3W
3W
1W
Gp
13.7B
13.7B
12.4dB
12.5B
11.1dB
Gp
19.7dB
19.5dB
12.2B
η
65%
70%
66%
60%
53%
ηACP
35% -39Bc
32% -40dBc
32% -34dBc
RD01MUS2
or RD01MUS1
RD07MUS2B
2stageRD07MUS2B with dirver PA) amplifier for analog radio solution
Application Note Frequency Band
Vds
Pin
Po
Gp
AN-VHF-053
135 to 175MHz
7.2V
0.03W
7.1W
23.7dB
AN-UHF-097
400 to 470MHz
7.2V
0.03W
7W 23.6B
AN-UHF-115
450 to 530MHz
7.2V
0.03W
7.4W
23.9dB
AN-900-040
763 to 870MHz
7.2V
0.03W
7.2W
23.8B
2stageRD07MUS2B with dirver PA) amplifier for digital radio solution
Application Note Frequency Band
Vds
Pin
Po
Gp
AN-UHF-116
380 to 430MHz
7.2V
0.001W
3W
34.9dB
η
47%
55%
45%
53%
ηACP
32% -39dBc
Publication Date : Oct.2011
16
Datasheet pdf - http://www.DataSheet4U.co.kr/










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