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零件编号 | D103 | ||
描述 | NPN Transistor - 2SD103 | ||
制造商 | Inchange Semiconductor | ||
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1 Page
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SD103
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
·High Power Dissipation-
: PC= 25W(Max)@TC=25℃
Complement to Type 2SB503
APPLICATIONS
·Designed for audio power amplifier, power switching, DC-DC
converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
80
www.DataSheet.net/
V
50 V
VEBO
Emitter-Base Voltage
10 V
IC Collector Current-Continuous
3A
IE Emitter Current-Continuous
-3 A
IBB Base Current-Continuous
Collector Power Dissipation
PC @TC=25℃
TJ Junction Temperature
Tstg Storage Temperature
1A
25 W
150 ℃
-65~150
℃
isc Website:www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.co.kr/
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页数 | 2 页 | ||
下载 | [ D103.PDF 数据手册 ] |
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