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PDF ( 数据手册 , 数据表 ) RJH1CM5DPQ-E0

零件编号 RJH1CM5DPQ-E0
描述 IGBT
制造商 Renesas
LOGO Renesas LOGO 


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RJH1CM5DPQ-E0 数据手册, 描述, 功能
Preliminary Datasheet
RJH1CM5DPQ-E0
1200V - 15A - IGBT
Application: Inverter
R07DS0520EJ0300
Rev.3.00
Jan 19, 2012
Features
Short circuit withstand time (10 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 2.1 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25°C)
Built-in fast recovery diode (trr = 200 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 100 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 15 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
C
4
123
1. Gate
2. Collector
G 3. Emitter
4. Collector
www.DataSheet.net/
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
IDF
iDF(peak) Note1
PC Note2
j-c Note2
Tj
Tstg
Ratings
1200
30
30
15
60
15
60
260.4
0.48
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C
°C
R07DS0520EJ0300 Rev.3.00
Jan 19, 2012
Page 1 of 3
Datasheet pdf - http://www.DataSheet4U.co.kr/












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