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PDF ( 数据手册 , 数据表 ) GB30RF60K

零件编号 GB30RF60K
描述 IGBT PIM MODULE
制造商 International Rectifier
LOGO International Rectifier LOGO 


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GB30RF60K 数据手册, 描述, 功能
IGBT PIM MODULE
Features
• Low VCE (on) Non Punch Through IGBT Technology
• Low Diode VF
• 10μs Short Circuit Capability
• Square RBSOA
• HEXFRED Antiparallel Diode with Ultrasoft
Reverse Recovery Characteristics
• Positive VCE (on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design
• TOTALLY LEAD-FREE
Benefits
• Benchmark Efficiency for Motor Control
• Rugged Transient Performance
• Low EMI, Requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Low Junction to Case Thermal Resistance
Absolute Maximum Ratings
Inverter
Parameter
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Collector Current
Input Rectifier
Brake
Diode Maximum Forward Current
Power Dissipation
Repetitive Peak Reverse Voltage
Average Output Current
Surge Current (Non Repetitive)
I2 t (Non Repetitive)
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Collector Current
Power Dissipation
Repetitive Peak Reverse Voltage
Maximum Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Thermal and Mechanical Characteristics
Parameter
Junction-to-Case Inverter IGBT Thermal Resistance
Junction-to-Case Inverter FRED Thermal Resistance
Junction-to-Case Brake DIODE Thermal Resistance
Junction-to-Case Brake IGBT Thermal Resistance
Junction-to-Case Input Rectifier Thermal Resistance
Case-to-Sink, flat, greased surface
Mounting Torque (M5)
Weight
Document Number: 94479
ECONO2 PIM
Bulletin I27303 01/07
GB30RF60K
VCES = 600V
IC = 27A @ TC=80°C
tsc > 10μs @ TJ =150°C
VCE(on) typ. = 2.04V
R
23
24
Symbol
VCES
VGES
ICwww.DataSheet.net/
ICM
IFM
PD
VRRM
IF(AV)
IFSM
I2t
VCES
VGES
IC
ICM
PD
VRRM
TJ
TSTG
VISOL
Test Conditions
Ratings
600
±20
Continuos
25°C / 80°C
50 / 27
Pulsed
25°C
100
25°C
100
One IGBT
25°C
129
800
50/60Hz sine pulse
80°C
30
Rated VRRM applied, 10ms,
sine pulse
310
525
600
±20
Continuous
25°C / 80°C
30 / 20
Pulsed
25°C
60
One IGBT
25°C
100
600
150
-40 to +125
AC (1 min)
2500
Units
V
A
W
V
A
A2s
V
A
W
V
°C
V
Symbol
Min
Typical
Maximum Units
-
-
0.97
°C/W
- - 1.42
RθJC
-
-
- 2.44
- 1.25
- - 1.03
RθCS
-
2.7
0.05
-
-
3.3 Nm
170 g
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1
Datasheet pdf - http://www.DataSheet4U.co.kr/







GB30RF60K pdf, 数据表
GB30RF60K
Bulletin I27303 01/07
30
Brake
30
20
Vge=18V
Vge=15V
Vge=12V
10
Vge=10V
Vge=8V
20
Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V
10
0
01234
Vce (V)
Fig. 20 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
70
60
50
40
30 Tj = 25°C
20 Tj = 125°C
10
0
4 6 8 10 12 14
Vge (V)
Fig. 22 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
20
16 Ice=5A
Ice=20A
12 Ice=30A
8
4
0
5 10 15
Vge (V)
Fig.24- Typical VCE vs. VGE
TJ = 125°C
Document Number: 94479
20
0
01234
Vce (V)
Fig. 21 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80μs
20
Ice=5A
Ice=20A
15 Ice=30A
10
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5
0
5 10 15
Vge (V)
Fig. 23 - Typical VCE vs. VGE
TJ = 25°C
10000
20
1000
100
Cies
Coes
Cres
10
0
20 40 60 80 100
Vce (V)
Fig. 25- Typ. Capacitance vs. VCE
VGE= 0; f = 1MHz
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Datasheet pdf - http://www.DataSheet4U.co.kr/














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