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PDF ( 数据手册 , 数据表 ) R6018ANJ

零件编号 R6018ANJ
描述 Drive Nch MOSFET
制造商 ROHM Semiconductor
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R6018ANJ 数据手册, 描述, 功能
Data Sheet
10V Drive Nch MOSFET
R6018ANJ
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High-speed switching.
3) Wide SOA.
4) Drive circuits can be simple.
5) Parallel use is easy.
Dimensions (Unit : mm)
LPTS
10.1 4.5 1.3
(1) Gate
(2) Drain
(3) Source
1.24
2.54 0.78
5.08
(1) (2) (3)
0.4
2.7
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
R6018ANJ
Taping
TL
1000
www.DataSheet.co.kr
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID *3
IDP *1
IS *3
ISP *1
IAS *2
EAS *2
PD *4
Tch
Tstg
600
30
18
72
18
72
9
21.6
100
150
55 to 150
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25C
*3 Limited only by maximum temperature allowed.
*4 TC=25C
Unit
V
V
A
A
A
A
A
mJ
W
C
C
Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)
Limits
1.25
Unit
C / W
Inner circuit
1
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/












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