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零件编号 | B772D | ||
描述 | PNP Transistor - 2SB772D | ||
制造商 | Dc Components | ||
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SB772D
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage of 1W audio amplifier,
voltage regulator, DC-DC converter and relay driver.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current(DC)
Total Power Dissipation(TC=25oC)
Total Power Dissipation(TA=25oC)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IC
IB
PD
PD
TJ
TSTG
Rating
-40
-30
-5
-3
-7
-0.6
10
1
+150
-55 to +150
Unit
V
V
V
A
A
A
W
W
oC
oC
TO-126ML
.163(4.12)
.153(3.87)
.044(1.12)
.034(0.87)
.146(3.70)
.136(3.44)
.148(3.75)
.138(3.50)
.060(1.52)
.050(1.27)
.300(7.62)
.290(7.37)
123
.084(2.12)
.074(1.87)
.591(15.0)
.551(14.0)
(4.1.5860) Typ
.056(1.42)
.046(1.17)
.033(0.84)
.027(0.68)
.090
(2.28)
Typ
.123(3.12)
.113(2.87)
.084(2.14)
.074(1.88)
.027(0.69)
.017(0.43)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO -40
-
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
BVCEO
BVEBO
ICBO
-30
-5
-
-
-
-
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
IEBO
VCE(sat)
VBE(sat)
-
-
-
-
-0.3
-1
DC Current Gain(1)
hFE1
hFE2
30
100
-
200
Transition Frequency
fT -
80
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
55
Classification of hFE2
Rank
Q
P
E
Range
100~200
160~320
200~400
Max Unit
Test Conditions
- V IC=-100µA
- V IC=-1mA
- V IE=-10µA
-1 µA VCB=-30V
-1 µA VEB=-3V
-0.5 V IC=-2A, IB=-0.2A
-2 V IC=-2A, IB=-0.2A
- - IC=-20mA, VCE=-2V
400 - IC=-1A, VCE=-2V
- MHz IC=-0.1A, VCE=-5V
- pF IE=0, VCB=-10V, f=1MHz
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下载 | [ B772D.PDF 数据手册 ] |
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