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零件编号 | 2SC3074 | ||
描述 | TRANSISTOR (HIGH CURRENT SWITCHING APPLICATIONS) | ||
制造商 | Toshiba Semiconductor | ||
LOGO | |||
1 Page
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3074
2SC3074
High Current Switching Applications
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A)
• High speed switching time: tstg = 1.0 μs (typ.)
• Complementary to 2SA1244
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 5 A
Base current
IB 1 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
1.0
W
20
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC
JEITA
―
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-08-27
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页数 | 5 页 | ||
下载 | [ 2SC3074.PDF 数据手册 ] |
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