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零件编号 | V30100S | ||
描述 | High-Voltage Trench MOS Barrier Schottky Rectifier | ||
制造商 | Vishay | ||
LOGO | |||
1 Page
www.vishay.com
V30100S, VI30100S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA
K
V30100S
3
2
1
PIN 1
PIN 2
PIN 3
CASE
3
2
1
VI30100S
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 30 A
TJ max.
Package
30 A
100 V
250 A
0.69 V
150 °C
TO-220AB, TO-262AA
Diode variations
Single die
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
VRRM
IF(AV)
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
V30100S
VI30100S
100
30
250
10 000
-40 to +150
UNIT
V
A
A
V/μs
°C
Revision: 22-Dec-14
1 Document Number: 89175
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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页数 | 5 页 | ||
下载 | [ V30100S.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
V30100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay |
V30100PW-M3 | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay |
V30100S | High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay |
V30100SG | High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay |
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