DataSheet8.cn


PDF ( 数据手册 , 数据表 ) VF20150C

零件编号 VF20150C
描述 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
制造商 Vishay
LOGO Vishay LOGO 


1 Page

No Preview Available !

VF20150C 数据手册, 描述, 功能
www.vishay.com
V20150C, VF20150C, VB20150C, VI20150C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.59 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20150C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
123
VF20150C
PIN 1
PIN 2
PIN 3
TO-262AA
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB
and TO-262AA package)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
2
1
VB20150C
PIN 1
K
PIN 2
HEATSINK
3
2
1
VI20150C
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
150 V
IFSM
120 A
VF at IF = 10 A
0.69 V
TJ max.
150 °C
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20150C
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current
(fig. 1)
per device
per diode
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
IFSM
EAS
IRRM
dV/dt
VAC
Operating junction and storage temperature range
TJ, TSTG
VF20150C VB20150C
150
20
10
120
70
0.5
10 000
1500
- 55 to + 150
VI20150C
UNIT
V
A
A
mJ
A
V/μs
V
°C
Revision: 20-Nov-12
1 Document Number: 89046
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000












页数 5 页
下载[ VF20150C.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
VF20150CDual High-Voltage Trench MOS Barrier Schottky RectifierVishay
Vishay
VF20150SHigh-Voltage Trench MOS Barrier Schottky RectifierVishay
Vishay
VF20150SGHigh-Voltage Trench MOS Barrier Schottky RectifierVishay
Vishay

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap