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PDF ( 数据手册 , 数据表 ) VEC2616

零件编号 VEC2616
描述 N-Channel and P-Channel Silicon MOSFETs
制造商 Sanyo Semicon Device
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VEC2616 数据手册, 描述, 功能
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Ordering number : ENA1822
VEC2616
SANYO Semiconductors
DATA SHEET
VEC2616
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
ON-resistance Nch: RDS(on)1=62mΩ(typ.), Pch: RDS(on)1=105mΩ(typ.)
4V drive
N-channel MOSFET + P-channel MOSFET
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
When mounted on ceramic substrate (900mm2×0.8mm)
N-channel P-channel
60 --60
±20 ±20
3 --2.5
12 --10
0.9
1.0
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Package Dimensions
unit : mm (typ)
7012-002
8 7 65
0.3
0.15
Product & Package Information
• Package
: VEC8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
1234
0.65
2.9
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : VEC8
UP
Lot No.
TL
Electrical Connection
87 6 5
1234
http://semicon.sanyo.com/en/network
91510PE TK IM TC-00002461 No. A1822-1/6
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