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零件编号 | MI3407 | ||
描述 | P-Channel 30V (D-S)MOSFET | ||
制造商 | MegaPower Semiconductor | ||
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P-Channel 30V (D-S)MOSFET
General Description
This miniature surface monut MOSFET uses
advanced trench process , low RDS(on) assures
minimal power loss and energy conversion ,
which makes this device ideal for use in power
managementcircuit.
Applications
Load switch
DC-DC converters
Power management
MI3407
Features
VDS (V) = -30V
ID(A) = -4A (VGS = -10V)
RDS(on) = 0.060 ohm @ VGS = -10V
RDS(on) = 0.090 ohm@ VGS = -4.5V
Low gate charge
Fast switching speed
DD
S
SOT-23
G
G
Absolute Maximum Ratings (TA = 25℃ Unless Otherwise Noted)
S
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction)a
Power Dissipation a
Operating Junction and Storage Temperature Range
TA=25℃
TA=70℃
TA=25℃
TA=70℃
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ,Tstg
Maximum
-30
±20
-4
-3.2
-20
-2.2
1.4
1.0
-55 to 150
Thermal Resistance Ratings
Parameter
Symbol Maximum
Maximum Junction-to-Ambient a
t<= 5 sec
Steady-State
RθJA
90
130
Units
V
A
A
W
℃
Units
℃/W
Megapower Semiconductor Mar,2009
1
MI3407 Rev.2.1
Datasheet pdf - http://www.DataSheet4U.net/
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页数 | 5 页 | ||
下载 | [ MI3407.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
MI3407 | P-Channel 30V (D-S)MOSFET | MegaPower Semiconductor |
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