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零件编号 | H50N03J | ||
描述 | N-Channel Enhancement-Mode MOSFET | ||
制造商 | Hi-Sincerity Mocroelectronics | ||
LOGO | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200514
Issued Date : 2005.01.01
Revised Date : 2005.10.14
Page No. : 1/5
H50N03J
N-Channel Enhancement-Mode MOSFET (25V, 50A)
Features
• RDS(on)=6mΩ@VGS=10V, ID=30A
• RDS(on)=9mΩ@VGS=4.5V, ID=30A
• Advanced trench process technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Improved Shoot-Through FOM
H50N03J Pin Assignment
Tab 3-Lead Plastic TO-252
Package Code: J
Pin 1: Gate
3
2
1
Pin 2 & Tab: Drain
Pin 3: Source
D
Internal Schematic
Diagram
G
S
Maximum Ratings & Thermal Characteristics
(TA=25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current *1
Maximum Power Dissipation
TA=25oC
TA=75oC
Operating Junction and Storage Temperature Range
Avalanche Energy with Single Pulse
ID=50A, VDD=25V, L=0.1mH
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance(PCB mounted)*2
*1: Maximum DC current limited by the package.
*2: 1-in2 2oz Cu PCB board
VDS
VGS
ID
IDM
PD
TJ,Tstg
EAS
RθJC
RθJA
Value
25
±20
50
350
70
42
-55 to 150
300
1.8
40
Units
V
V
A
A
W
W
oC
mJ
OC/W
OC/W
Switching
Test Circuit
VDD
VGEN
VIN
RG G
D
S
VOUT
Switching
Waveforms
td(on)
ton
tr td(off)
90%
toff
tf
90 %
Output, VOUT
Input, VIN 10%
10%
10%
Inverted
90%
50%
50%
Pulse Width
H50N03J
HSMC Product Specification
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页数 | 5 页 | ||
下载 | [ H50N03J.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
H50N03E | N-Channel Enhancement-Mode MOSFET | Hi-Sincerity Mocroelectronics |
H50N03J | N-Channel Enhancement-Mode MOSFET | Hi-Sincerity Mocroelectronics |
H50N03U | N-Channel Enhancement-Mode MOSFET | Hi-Sincerity Mocroelectronics |
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