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PDF ( 数据手册 , 数据表 ) H50N03J

零件编号 H50N03J
描述 N-Channel Enhancement-Mode MOSFET
制造商 Hi-Sincerity Mocroelectronics
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H50N03J 数据手册, 描述, 功能
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200514
Issued Date : 2005.01.01
Revised Date : 2005.10.14
Page No. : 1/5
H50N03J
N-Channel Enhancement-Mode MOSFET (25V, 50A)
Features
RDS(on)=6m@VGS=10V, ID=30A
RDS(on)=9m@VGS=4.5V, ID=30A
Advanced trench process technology
High Density Cell Design for Ultra Low On-Resistance
Specially Designed for DC/DC Converters and Motor Drivers
Fully Characterized Avalanche Voltage and Current
Improved Shoot-Through FOM
H50N03J Pin Assignment
Tab 3-Lead Plastic TO-252
Package Code: J
Pin 1: Gate
3
2
1
Pin 2 & Tab: Drain
Pin 3: Source
D
Internal Schematic
Diagram
G
S
Maximum Ratings & Thermal Characteristics
(TA=25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current *1
Maximum Power Dissipation
TA=25oC
TA=75oC
Operating Junction and Storage Temperature Range
Avalanche Energy with Single Pulse
ID=50A, VDD=25V, L=0.1mH
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance(PCB mounted)*2
*1: Maximum DC current limited by the package.
*2: 1-in2 2oz Cu PCB board
VDS
VGS
ID
IDM
PD
TJ,Tstg
EAS
RθJC
RθJA
Value
25
±20
50
350
70
42
-55 to 150
300
1.8
40
Units
V
V
A
A
W
W
oC
mJ
OC/W
OC/W
Switching
Test Circuit
VDD
VGEN
VIN
RG G
D
S
VOUT
Switching
Waveforms
td(on)
ton
tr td(off)
90%
toff
tf
90 %
Output, VOUT
Input, VIN 10%
10%
10%
Inverted
90%
50%
50%
Pulse Width
H50N03J
HSMC Product Specification












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