|
|
零件编号 | HP142TS | ||
描述 | NPN SILICON TRANSISTOR | ||
制造商 | SHANTOU HUASHAN ELECTRONIC DEVICES | ||
LOGO | |||
1 Page
www.DataSheet4U.net
Shantou Huashan Electronic Devices Co.,Ltd.
NPN DARLINGTON TRANSISTOR
HP142TS
█ APPLICATIONS
High DC Current Gain
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation(Tc=25℃)…………………… 70W
VCBO——Collector-Base Voltage…………………………… 100V
VCEO——Collector-Emitter Voltage………………………… 100V
VEBO——Emitter-Base Voltage……………………………… 5V
IC——Collector Current(DC)……………………………… 8A
IB——Base Current……………………………………………0.5A
TO-220
1―Base,B
2―Collector,C
3―Emitter, E
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
BVCEO(SUS)
ICEO
ICBO
IEBO
HFE(1)
HFE(2)
VCE(sat1)
VCE(sat2)
VBE(sat)
VBE(on)
tD
tR
tS
tF
Characteristics
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Base- Emitter On Voltage
Deiay time
Rise Time
Storage Time
Fall Time
Min Typ Max
100
1000
1000
0.15
2
1
2
2
3
3.5
3
0.55
2.5
2.5
Unit
V
mA
mA
mA
V
V
V
V
uS
uS
uS
uS
Test Conditions
IC=30mA, IB=0
VCE=50V, IB=0
VCB=100V, IE=0
VEB=5V, IC=0
VCE=4V, IC=0.5A
VCE=4V, IC=3A
IC=5A, IB=10mA
IC=10A, IB=40mA
IC=10A, IB=40mA
VCE=4V,IC=10A,
Vcc=30V,Ic=5A
IB1=20mA
IB2=-20mA
|
|||
页数 | 2 页 | ||
下载 | [ HP142TS.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
HP142T | NPN SILICON TRANSISTOR | SHANTOU HUASHAN ELECTRONIC DEVICES |
HP142TS | NPN SILICON TRANSISTOR | SHANTOU HUASHAN ELECTRONIC DEVICES |
HP142TSW | NPN SILICON TRANSISTOR | SHANTOU HUASHAN ELECTRONIC DEVICES |
零件编号 | 描述 | 制造商 |
STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
DataSheet8.cn | 2020 | 联系我们 | 搜索 | Simemap |