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PDF ( 数据手册 , 数据表 ) IKP10N60T

零件编号 IKP10N60T
描述 IGBT
制造商 Infineon Technologies
LOGO Infineon Technologies LOGO 


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IKP10N60T 数据手册, 描述, 功能
TrenchStop® Series
IKP10N60T
p
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5μs
Designed for :
- Variable Speed Drive for washing machines, air
conditioners and induction cooking
- Uninterrupted Power Supply
TrenchStop® and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
G
PG-TO-220-3-1
C
E
Type
IKP10N60T
VCE
600V
IC
10A
VCE(sat),Tj=25°C
1.5V
Tj,max
175°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE 600V, Tj 175°C
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature,
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Marking Code
K10T60
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Package
PG-TO-220-3-1
Value
600
20
10
30
30
20
10
30
±20
5
110
-40...+175
-55...+175
260
Unit
V
A
V
μs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
www.DaPtaoSwheeet4rUS.neetmiconductors
1
Rev. 2.3 Sep. 07







IKP10N60T pdf, 数据表
TrenchStop® Series
IKP10N60T
p
15V
120V
480V
10V
5V
0 V0 n C
20nC
40nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=10 A)
60nC
1nF
C iss
100pF
C oss
C rss
10pF
0V
10V 20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
150A
125A
100A
75A
50A
25A
0A12V 14V 16V 18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE 400V, Tj 150°C)
12µs
10µs
8µs
6µs
4µs
2µs
0µs10V 11V 12V 13V 14V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C,
TJmax<150°C)
Power Semiconductors
8
Rev. 2.3 Sep. 07














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