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PDF ( 数据手册 , 数据表 ) IDC08S60CE

零件编号 IDC08S60CE
描述 Schottky Diode
制造商 Infineon Technologies
LOGO Infineon Technologies LOGO 


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IDC08S60CE 数据手册, 描述, 功能
2nd generation thinQ!TM SiC Schottky Diode
IDC08S60CE
Features:
Applications:
Revolutionary semiconductor material -
Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on the switching
behavior
No forward recovery
www.HDaigtahShseeut4rUg.enetcurrent capability
SMPS, PFC, snubber
A
C
Chip Type
IDC08S60CE
VBR
600V
IF
8A
Die Size
1.658 x 1.52 mm2
Package
sawn on foil
Mechanical Parameter
Raster size
Anode pad size
Area total
Thickness
Wafer size
Max. possible chips per wafer
Passivation frontside
Anode metal
Cathode metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
1.658x 1.52
1.421 x 1.283
mm2
2.52
355 µm
100 mm
2682
Photoimide
3200 nm Al
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, 350µm
∅ ≥ 0.3 mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, AIM IMM, Edition 1.1, 27.01.2009












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IDC08S60C2nd generation thinQ! SiC Schottky DiodeInfineon Technologies
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IDC08S60CESchottky DiodeInfineon Technologies
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