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PDF ( 数据手册 , 数据表 ) FNA40860

零件编号 FNA40860
描述 Smart Power Module
制造商 Fairchild Semiconductor
LOGO Fairchild Semiconductor LOGO 


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FNA40860 数据手册, 描述, 功能
FNA40860
Smart Power Module
January 2010
Motion-SPMTM
Features
• 600V-8A 3-phase IGBT inverter bridge including control ICs
for gate driving and protection
• Easy PCB layout due to built-in bootstrap diode and VS out-
put
• Divided negative dc-link terminals for inverter current sensing
applications
• Single-grounded power supply due to built-in HVIC
• Built-in thermistor for over-temperature monitoring
• Isolation rating of 2000Vrms/min.
Applications
• AC 100V ~ 253V three-phase inverter drive for small power
ac motor drives
• Home appliances applications like air conditioner and refrig-
erator
General Description
It is an advanced motion-smart power module (Motion-SPMTM)
that Fairchild has newly developed and designed to provide
very compact and high performance ac motor drives mainly tar-
geting low-power inverter-driven application like air conditioner
and refrigerator. It combines optimized circuit protection and
drive matched to low-loss IGBTs. System reliability is further
enhanced by the integrated under-voltage lock-out protection,
short-circuit protection, and temperature monitoring. The high
speed built-in HVIC provides opto-coupler-less single-supply
IGBT gate driving capability that further reduce the overall size
of the inverter system design. Each phase current of inverter
can be monitored separately due to the divided negative dc ter-
minals.
Additional Information
For further infomation, please see AN-9070 and FEB305-001 in
http://www.fairchildsemi.com
www.DataSheet4U.net
Figure 1.
©2010 Fairchild Semiconductor Corporation
FNA40860 Rev. C
1
www.fairchildsemi.com







FNA40860 pdf, 数据表
R-T Curve
600
550 R-T Curve in 50~ 125
500 20
450 16
400
12
350
8
300
250 4
200
0
50 60 70 80 90 100 110 120
150 Temperature []
100
50
0
-20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120
Temperature TTH[]
Figure. 6. R-T Curve of The Built-in Thermistor
Bootstrap Diode Part
Symbol
Parameter
VF Forward Voltage
trr Reverse Recovery Time
Conditions
IF = 0.1A, TC = 25°C
IF = 0.1A, TC = 25°C
Min.
-
-
Typ.
2.5
80
Max.
-
-
Units
V
ns
www.DataSheet4U.net
Built in Bootstrap Diode VF-IF Characteristic
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0 TC=25
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
VF [V]
Note:
6. Built in bootstrap diode includes around 15 resistance characteristic.
Figure 7. Built in Bootstrap Diode Characteristic
FNA40860 Rev. C
8 www.fairchildsemi.com














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