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零件编号 | IKP20N60T | ||
描述 | IGBT | ||
制造商 | Infineon Technologies | ||
LOGO | |||
1 Page
TrenchStop® Series
IKP20N60T
IKW20N60T
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• TrenchStop® and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
• Positive temperature coefficient in VCE(sat)
PG-TO-220-3-1
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
G
PG-TO-247-3
C
E
Type
VCE
IC VCE(sat),Tj=25°C
Tj,max
Marking
IKP20N60T 600V 20A
1.5V
175°C
K20T60
IKW20N60T 600V 20A
1.5V
175°C
K20T60
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
T = 100°CCwww.DataSheet4U.net
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)
Diode forward current, limited by Tjmax TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
Package
PG-TO-220-3-1
PG-TO-247-3
Value
600
40
20
60
60
40
20
60
±20
5
166
-40...+175
-55...+175
260
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.5 Sep. 08
TrenchStop® Series
IKP20N60T
IKW20N60T
15V
120V
480V
10V
5V
0 V0 n C
30nC 60nC 90nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=20 A)
120nC
1nF
C iss
100pF
C oss
C rss
10pF
0V
10V 20V 30V 40V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
300A
250A
200A
www.DataSheet4U.net
150A
100A
50A
0A12V 14V 16V 18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE ≤ 400V, Tj ≤ 150°C)
12µs
10µs
8µs
6µs
4µs
2µs
0µs10V 11V 12V 13V 14V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C,
TJmax<150°C)
Power Semiconductors
8
Rev. 2.5 Sep. 08
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页数 | 14 页 | ||
下载 | [ IKP20N60T.PDF 数据手册 ] |
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