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零件编号 | L468 | ||
描述 | Dual HiPerFREDTM Epitaxial Diode in ISOPLUS i4-PACTM | ||
制造商 | IXYS Corporation | ||
LOGO | |||
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Advanced Technical Information
Dual HiPerFREDTM
Epitaxial Diode
in ISOPLUS i4-PACTM
DSEE 55-24N1F
VRRM = 2400 V
IF(AV)M = 55 A
trr = 220 ns
1
3
1
3
55
Rectifier Bridge
Symbol
VRRM c
VRRM
IFAV
IF(AV)M
IFSM
EAS
Ptot
Conditions
Maximum Ratings
2400
1200
V
V
TC = 90°C; sine 180°
TC = 90°C; d = 0.5 rectangular
TVJ = 25°C; t = 10 ms; sine 50 Hz
IAS = 16 A; LAS = 180 µH; TC = 25°C; non repetitive
TC = 25°C
(per diode)
53
55
500
28
200
A
A
A
mJ
W
Symbol
V
F
IR
IRM
trr
RthJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
I
F
=
40
A;
TVJ
=
25°C
TVJ = 125°C
VR = VRRM; TVJ = 25°C
TVJ = 125°C
IF = 75 A; diF /dt = -750 A/µs; TVJ = 125°C
VR = 600 V
(per diode)
2.0 2.5 V
1.5 V
1 mA
1 mA
79 A
220 ns
0.63 K/W
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
c Diodes connected in series
Features
• HiPerFREDTM Epitaxial Diodes
- fast and soft reverse recovery –
low switching losses
- avalanche rated
- low leakage current
• ISOPLUS i4-PACTM package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- enlarged creepage between pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
• rectifiers
- high frequency rectifiers, output
rectifiers of switched mode power
supplies
- mains rectifiers with minimized
emission of disturbances
• diodes in snubber networks
• high voltage diodes using the series
connection in the component
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
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页数 | 2 页 | ||
下载 | [ L468.PDF 数据手册 ] |
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L468 | Dual HiPerFREDTM Epitaxial Diode in ISOPLUS i4-PACTM | IXYS Corporation |
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