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零件编号 | DE275X2-102N06A | ||
描述 | RF Power MOSFET | ||
制造商 | IXYS Corporation | ||
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1 Page
Directed Energy, Inc.
An IXYS Company
DE275X2-102N06A
RF Power MOSFET
♦ Common Source Push-Pull Pair
♦ N-Channel Enhancement Mode
♦ Low Qg and Rg
♦ High dv/dt
♦ Nanosecond Switching
The DE275X2-102N06A is a matched pair of RF power MOSFET devices in
a common source configuration. The device is optimized for push-pull or
parallel operation in RF generators and amplifiers at frequencies to >65
MHz.
Preliminary Data Sheet
VDSS = 1000 V
ID25 =
6A
RDS(on) = 2.0 Ω
PDHS = 750 W
Unless noted, specifications are for each output device
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PDHS (1)
PDAMB (1)
RthJHS (1)
TJ
TJM
Tstg
TL
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
Tc = 25°C
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
IS = 0
Tc = 25°C, Derate 6.0W/°C above 25°C
Tc = 25°C
1.6mm (0.063 in) from case for 10 s
Maximum Ratings
1000
V
1000
V
±20 V
±30 V
DRAIN 1
DRAIN 2
6A
48 A GATE 1
6A
GATE 2
20 mJ
5 V/ns
SG1 SD1
SD2 SG2
>200
750
5.0
0.17
-55…+150
150
-55…+150
300
4
V/ns
W
W
K/W
°C
°C
°C
°C
g
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Qg process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Symbol Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min.
typ. max.
VDSS
VGS = 0 V, ID = 3 ma
www.DataVShGeSe(tht4) U.com VDS = VGS, ID = 4 ma
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
1000
2.5
V
5.5 V
±100 nA
50 µA
1 mA
RDS(on)
VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
2.5 Ω
gfs VDS = 15 V, ID = 0.5ID25, pulse test 2 6
S
Advantages
• High Performance Push-Pull RF
Package
• Optimized for RF and high speed
switching at frequencies to >100MHz
• Easy to mount—no insulators needed
• High power density
Note: All specifications are per each tran-
sistor, unless otherwise noted.
(1) Thermal specifications are for the
package, not per transistor
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页数 | 3 页 | ||
下载 | [ DE275X2-102N06A.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
DE275X2-102N06A | RF Power MOSFET | IXYS Corporation |
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