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PDF ( 数据手册 , 数据表 ) DE275X2-102N06A

零件编号 DE275X2-102N06A
描述 RF Power MOSFET
制造商 IXYS Corporation
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DE275X2-102N06A 数据手册, 描述, 功能
Directed Energy, Inc.
An IXYS Company
DE275X2-102N06A
RF Power MOSFET
Common Source Push-Pull Pair
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
The DE275X2-102N06A is a matched pair of RF power MOSFET devices in
a common source configuration. The device is optimized for push-pull or
parallel operation in RF generators and amplifiers at frequencies to >65
MHz.
Preliminary Data Sheet
VDSS = 1000 V
ID25 =
6A
RDS(on) = 2.0
PDHS = 750 W
Unless noted, specifications are for each output device
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PDHS (1)
PDAMB (1)
RthJHS (1)
TJ
TJM
Tstg
TL
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
Tc = 25°C
IS IDM, di/dt 100A/µs, VDD VDSS,
Tj 150°C, RG = 0.2
IS = 0
Tc = 25°C, Derate 6.0W/°C above 25°C
Tc = 25°C
1.6mm (0.063 in) from case for 10 s
Maximum Ratings
1000
V
1000
V
±20 V
±30 V
DRAIN 1
DRAIN 2
6A
48 A GATE 1
6A
GATE 2
20 mJ
5 V/ns
SG1 SD1
SD2 SG2
>200
750
5.0
0.17
-55…+150
150
-55…+150
300
4
V/ns
W
W
K/W
°C
°C
°C
°C
g
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
IXYS advanced low Qg process
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Symbol Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min.
typ. max.
VDSS
VGS = 0 V, ID = 3 ma
www.DataVShGeSe(tht4) U.com VDS = VGS, ID = 4 ma
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
1000
2.5
V
5.5 V
±100 nA
50 µA
1 mA
RDS(on)
VGS = 15 V, ID = 0.5ID25
Pulse test, t 300µS, duty cycle d 2%
2.5
gfs VDS = 15 V, ID = 0.5ID25, pulse test 2 6
S
Advantages
High Performance Push-Pull RF
Package
Optimized for RF and high speed
switching at frequencies to >100MHz
Easy to mount—no insulators needed
High power density
Note: All specifications are per each tran-
sistor, unless otherwise noted.
(1) Thermal specifications are for the
package, not per transistor












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