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PDF ( 数据手册 , 数据表 ) CQ202-4B

零件编号 CQ202-4B
描述 4.0 AMP TRIAC 200 THRU 800 VOLTS
制造商 Central Semiconductor
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CQ202-4B 数据手册, 描述, 功能
CQ202-4B
CQ202-4D
CQ202-4M
CQ202-4N
4.0 AMP TRIAC
200 THRU 800 VOLTS
CentralTM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ202-4B
series type is an Epoxy Molded Silicon Triac
designed for full wave AC control applications
featuring gate triggering in all four (4) quadrants.
MARKING CODE: FULL PART NUMBER
TO-202 THYRISTOR CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=80°C)
Peak Non-Repetitive Surge Current (t=8.3ms)
Peak Non-Repetitive Surge Current (t=10ms)
I2t Value for Fusing (t=10ms)
VDRM
IT(RMS)
ITSM
ITSM
I2t
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
Peak Gate Current (tp=10µs)
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
PGM
PG (AV)
IGM
Tstg
TJ
ΘJA
ΘJC
CQ202
-4B
200
CQ202
-4D
CQ202
-4M
400 600
4.0
40
35
6.0
3.0
0.2
1.2
-40 to +150
-40 to +125
60
7.5
CQ202
-4N UNITS
800 V
A
A
A
A2s
W
W
A
°C
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IDRM
IDRM
IGT
IGT
IH
VGT
VGT
VTM
dv/dt
Rated VDRM, RGK=1KΩ
Rated VDRM, RGK=1KΩ, TC=125°C
VD=12V, QUAD I, II, III
VD=12V, QUAD IV
RGK=1KΩ
VD=12V, QUAD I, II, III
VD=12V, QUAD IV
ITM=6.0A, tp=380µs
VD=2/3 VDRM, TC=125°C
5.0
TYP
6.6
35
5.2
1.1
2.0
1.25
MAX
10
200
20
50
25
1.5
2.5
1.60
UNITS
µA
µA
mA
mA
mA
V
V
V
V/µs
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R5 (27-June 2005)












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