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PDF ( 数据手册 , 数据表 ) DCX68

零件编号 DCX68
描述 NPN SURFACE MOUNT TRANSISTOR
制造商 Diodes
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DCX68 数据手册, 描述, 功能
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (DCX69)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
DCX68/-25
NPN SURFACE MOUNT TRANSISTOR
Please click here to visit our online spice models database.
SOT89-3L
COLLECTOR
3 E 2,4
C4 2 C
1B
1
BASE
3
TOP VIEW
EMITTER
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
25
20
5.0
1.0
2.0
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol Min Typ Max Unit
Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
25
20
5.0
V IC = 100μA, IE = 0
V IC = 10mA, IB = 0
V IE = 100μA, IC = 0
Collector-Base Cutoff Current
ICBO
0.1
10
μA VCB = 25V, IE = 0
VCB = 25V, IE = 0, TA = 150°C
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
IEBO
10 μA VEB = 5.0V, IC = 0
DC Current Gain
DCX68, DCX68-25
DCX68
hFE
50
60
85
VCE = 10V, IC = 5.0mA
375
VCE = 1.0V, IC = 1.0A
VCE = 1.0V, IC = 500mA
www.DCaotllaeSchtoere-Et4mUitt.ecor mSaturation Voltage
DCX68-25
160
375 VCE = 1.0V, IC = 500mA
VCE(SAT)
0.5 V IC = 1.0A, IB = 100mA
Base-Emitter Turn-On Voltage
VBE(ON)
1.0 V IC = 1.0A, VCE = 1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
330
MHz
VCE = 5.0V, IC = 100mA,
f = 100MHz
Output Capacitance
Cobo
25 pF VCB = 10V, IE = 0, f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
DS31163 Rev. 4 - 2
1 of 4
www.diodes.com
DCX68/-25
© Diodes Incorporated












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