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PDF ( 数据手册 , 数据表 ) 9520N

零件编号 9520N
描述 IRF9520N
制造商 International Rectifier
LOGO International Rectifier LOGO 


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9520N 数据手册, 描述, 功能
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
www.DataSheet4U.com
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD - 91521A
IRF9520N
HEXFET® Power MOSFET
D
VDSS = -100V
RDS(on) = 0.48
S ID = -6.8A
TO-220AB
Max.
-6.8
-4.8
-27
48
0.32
± 20
140
-4.0
4.8
-5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
3.1
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
5/13/98







9520N pdf, 数据表
IRF9520N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
10.54 (.415)
10.29 (.405)
4
3 .7 8 (.149 )
3 .5 4 (.139 )
-A -
6.47 (.255)
6.10 (.240)
1 23
1.15 (.045)
M IN
4.06 (.160)
3.55 (.140)
4.69 ( .18 5 )
4.20 ( .16 5 )
-B -
1.32 (.052)
1.22 (.048)
L E A D A S S IG NM E NT S
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
3X
1 .4 0 (.0 55 )
1 .1 5 (.0 45 )
2.54 (.100)
3X
0.93 (.037)
0.69 (.027)
0 .3 6 (.01 4) M B A M
3X
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
N OTES:
2X
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82.
2 C O N TR O L LIN G D IM E N S IO N : IN C H
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .
4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
Part Marking Information
TO-220AB
E X AEMXPALMEP :L ET:H ITSHIS AISN AINR FI1R0F1100 1 0
W ITWHITAHS SAESMSBELMYB L Y
L O TL OCTO DCEO D9EB 19MB 1 M
IN TIENRTNEARTNIOA TNIAOLN A L
R E CRTEICFITEIRF IE R
L O GLO G O
IR FI1R0F1100 1 0
9 2 4962 4 6
9B 9B1 M 1 M
A S SAESMSBELMYB L Y
L OTL O TC O DCEO D E
AA
P A RPTA RNTU MNBUEMRB E R
D A TDEA TCEO DCEO D E
(Y Y(WY YWW) W )
Y Y Y=Y Y=E AYRE A R
W WW =W W=EWE KE E K
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
www.DataSheet4U.com
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice.
5/98














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