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零件编号 | DB21413 | ||
描述 | Silicon epitaxial planar type | ||
制造商 | Panasonic Semiconductor | ||
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This product complies with the RoHS Directive (EU 2002/95/EC).
DB21413
Silicon epitaxial planar type
For rectification
Features
Forward current (Average) IF(AV) = 2 A rectification is possible
Low forward voltage VF and small reverse current IR
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Reverse voltage
VR 40
Forward current (Average) *1
IF(AV)
2
Non-repetitive peak forward surge current *2
IFSM
30
Junction temperature
Tj 125
Storage temperature
Tstg –55 to +125
Note) *1: Mounted on an alumina PC board (Board: 50 mm × 50 mm)
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Unit
V
A
A
°C
°C
Package
Code
SMini2-F4-B
Pin Name
1: Cathode
2: Anode
Marking Symbol: 4N
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
VF1 IF = 2.0 A
0.46 0.53
V
Reverse current
IR VR = 40 V
25 150 µA
Terminal capacitance
Ct VR = 10 V, f = 1 MHz
43 pF
Reverse recovery time *
trr
IF = IR = 100 mA, Irr = 0.1 × IR ,
RL = 100 Ω
12 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
www.DataSheet4U.com
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.1 × IR
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Publication date: November 2010
Ver.CED
1
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页数 | 4 页 | ||
下载 | [ DB21413.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
DB21413 | Silicon epitaxial planar type | Panasonic Semiconductor |
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