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零件编号 | DA2J108 | ||
描述 | Silicon epitaxial planar type | ||
制造商 | Panasonic Semiconductor | ||
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This product complies with the RoHS Directive (EU 2002/95/EC).
DA2J108
Silicon epitaxial planar type
For small current recitification
Features
Small reverse current IR
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Reverse voltage
Maximum peak reverse voltage
Output current (Average)
Repetitive peak forward current
Non-repetitive peak forward surge current *
Junction temperature
Storage temperature
Note) *: 1 t = 1 s
VR
VRM
IO(AV)
IFRM
IFSM
Tj
Tstg
Rating
300
300
200
600
1
150
–55 to +150
Unit
V
V
mA
mA
A
°C
°C
Package
Code
SMini2-F5-B
Pin Name
1: Cathode
2: Anode
Marking Symbol: A2
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Forward voltage (DC)
VF IF = 200 mA
Reverse current (DC)
IR1 VR = 200 V
IR2 VR = 300 V
Terminal capacitance
Ct VR = 0 V, f = 1 MHz
3.5
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 3 MHz
1.2
200
1
Unit
V
nA
µA
pF
www.DataSheet4U.com
Publication date: June 2010
ZKF00171AED
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页数 | 4 页 | ||
下载 | [ DA2J108.PDF 数据手册 ] |
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