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PDF ( 数据手册 , 数据表 ) KU2751K

零件编号 KU2751K
描述 N-Ch Trench MOSFET
制造商 KEC
LOGO KEC LOGO 


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KU2751K 数据手册, 描述, 功能
SEMICONDUCTOR
TECHNICAL DATA
KU2751K
N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for DC/DC Converter.
5
D
8
L1
4
e
1b
FEATURES
VDSS=30V, ID=52A.
Low Drain to Source On-state Resistance.
: RDS(ON)=11m (Max.) @ VGS=10V
: RDS(ON)=15m (Max.) @ VGS=4.5V
MAXIMUM RATING (Ta=25 Unless otherwise Noted)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain to Source Voltage
Gate to Source Voltage
VDSS
VGSS
30 V
20 V
Drain Current
DC@TC=25
Pulsed
Single Pulsed Avalanche Energy
(Note1)
(Note2)
(Note3)
ID
IDP
EAS
52
A
208
170 mJ
@TC=25
Drain Power Dissipation
@Ta=25
(Note1)
(Note2)
PD
54
W
2.5
Maximum Junction Temperature
Storage Temperature Range
Tj 150
Tstg -55 150
Thermal Resistance, Junction to Case
(Note1) RthJC
2.3
/W
Thermal Resistance, Junction to Ambient (Note2) RthJA
Note 1) RthJC means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1 1 Pad of 2 oz copper.
Note 3) L=78.5 H, IAS=52A, VDD=15V, VGS=10V, Starting Tj=25
50
/W
H
8
D1
5
E
E1
E2
A
C
KL
1
4
1,2,3 : Source
4 : Gate
5,6,7,8 : Drain
DIM MILLIMETERS
A 1.00 +_ 0.10
b 0.41+0.10/-0.08
C 0.25 +_ 0.05
D 4.90 +_ 0.10
D1 3.81+0.15/-0.20
E 6.00 +_ 0.10
E1 5.75 +_ 0.05
E2 3.58 +_ 0.20
e 1.27 BSC
H 0.51 +_ 0.10
K 1.10 MIN
L 0.61 +_ 0.10
L1 0.13 +_ 0.07
0 ~ 12
PSOP-8
MARKING
KU2751
K
Type Name
Lot No
PIN CONNECTION (TOP VIEW)
DDDD
DD D D
SSSG
S S SG
2010. 1. 18
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