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零件编号 | RJE0601JPE | ||
描述 | Silicon P Channel MOS FET Series Power Switching | ||
制造商 | Renesas Technology | ||
LOGO | |||
1 Page
RJE0601JPE
Silicon P Channel MOS FET Series
Power Switching
Preliminary Datasheet
REJ03G1906-0200
Rev.2.00
Jun 29, 2010
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
High endurance capability against to the short circuit.
Built-in the over temperature shut-down circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Low on-resistance RDS: 22 m Typ, 27 m Max (VGS = –10 V)
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
D
123
Current
G
Gate Resistor
Limitation
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
S
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Symbol
VDSS
VGSS
VGSS
ID
IDR
IAP Note 1
EAR Note 2
Pch Note 1
Channel temperature
Storage temperature
Tch
Tstg
Notes: 1. Value at Tc = 25C
2. Tch = 25C, Rg 50
3. It provides by the current limitation lower bound value.
Ratings
–60
–16
2.5
–40 Note 3
–40
–15
964
50
150
–55 to +150
1. Gate
2. Drain
(Flange)
3. Source
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
C
C
REJ03G1906-0200 Rev.2.00
Jun 29, 2010
www.DataSheet.in
Page 1 of 6
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页数 | 7 页 | ||
下载 | [ RJE0601JPE.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
RJE0601JPE | Silicon P Channel MOS FET Series Power Switching | Renesas Technology |
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