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PDF ( 数据手册 , 数据表 ) 5N60C

零件编号 5N60C
描述 FQB5N60C
制造商 Fairchild Semiconductor
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5N60C 数据手册, 描述, 功能
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FQB5N60C / FQI5N60C
600V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
• 4.5A, 600V, RDS(on) = 2.5@VGS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GS
D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
D
!
G!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C)*
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQB5N60C / FQI5N60C
600
4.5
2.6
18
± 30
210
4.5
10
4.5
3.13
100
0.8
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient*
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ Max Units
- 1.25 °C/W
- 40 °C/W
- 62.5 °C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003







5N60C pdf, 数据表
Package Dimensions (Continued)
9.90 ±0.20
I2-PAK
www.DataSheet4U.com
4.50 ±0.20
1.30
+0.10
0.05
1.27 ±0.10
2.54 TYP
1.47 ±0.10
0.80 ±0.10
2.54 TYP
0.50
+0.10
0.05
2.40 ±0.20
10.00 ±0.20
©2003 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A, October 2003














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