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PDF ( 数据手册 , 数据表 ) IRF1010EZLPbF

零件编号 IRF1010EZLPbF
描述 AUTOMOTIVE MOSFET
制造商 International Rectifier
LOGO International Rectifier LOGO 


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IRF1010EZLPbF 数据手册, 描述, 功能
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PD - 95483
IRF1010EZPbF
AUTOMOTIVE MOSFET IRF1010EZSPbF
Features
O Advanced Process Technology
O Ultra Low On-Resistance
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
O Lead-Free
G
IRF1010EZLPbF
HEXFET® Power MOSFET
D
VDSS = 60V
RDS(on) = 8.5m
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operat-
ing temperature, fast switching speed and im-
proved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applica-
tions.
TO-220AB
IRF1010EZ
ID = 75A
S
D2Pak
IRF1010EZS
TO-262
IRF1010EZL
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
Maximum Power Dissipation
Max.
84
60
75
340
140
Units
A
W
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
0.90
± 20
99
180
See Fig.12a,12b,15,16
-55 to + 175
W/°C
V
mJ
A
mJ
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
300 (1.6mm from case )
10 lbf•in (1.1N•m)
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
jJunction-to-Ambient (PCB Mount, steady state)
Typ.
–––
0.50
–––
–––
Max.
1.11
–––
62
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
06/29/04







IRF1010EZLPbF pdf, 数据表
IRF1010EZ/S/LPbF
www.DataSheet4U.com
+
‚
-

RG
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
Ground Plane
- Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 18b. Switching Time Waveforms
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